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| Product Description Stanford Microdevices SGA-4263 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction nonlinearities results in higher suppression of intermodulation products. At 850 Mhz and 45mA , the SGA-4263 typically provides +29.3 dBm output IP3, 13.7 dB of gain, and +14.2 dBm of 1dB compressed power using a single positive voltage supply. Only 2 DC-blocking capacitors, a bias resistor and an optional RF choke are required for operation. Gain & Return Loss vs. Frequency 16 GAIN VD= 3.2 V, ID= 45 mA (Typ.) Preliminary SGA-4263 DC-3500 MHz, Cascadable SiGe HBT MMIC Amplifier Product Features High Gain : 12.7 dB at 1950 MHz Cascadable 50 Ohm Patented SiGe Technology 0 -10 Return Loss (dB) 12 Gain (dB) 8 4 0 0 1 2 3 4 Frequency (GHz) 5 6 ORL IRL Operates From Single Supply Low Thermal Resistance Package -20 -30 -40 Applications Cellular, PCS, CDPD Wireless Data, SONET Satellite Units dB dB dB dBm dBm dBm dBm M Hz dB dB dB V C/W 1950 M Hz 1950 M Hz 1950 M Hz 2.9 Frequency 850 M Hz 1950 M Hz 2400 M Hz 850 M Hz 1950 M Hz 850 M Hz 1950 M Hz Min. 12.3 Ty p. 13.7 12.7 12.4 14.2 12.5 29.3 25.7 3500 31.3 13.8 3.7 3.2 255 3.5 Max. 15.1 Sy mbol G P1dB OIP3 Parameter Small Signal Gain Output Pow er at 1dB Compression Output Third Order Intercept Point (Pow er out per tone = -5dBm) Bandw idth Determined by Return Loss (<-10dB) IRL ORL NF VD RTh Input Return Loss Output Return Loss Noise Figure Device Voltage Thermal Resistance VS = 8 V RBIAS = 110 Ohms ID = 45 mA Typ. TL = 25C Test Conditions: OIP3 Tone Spacing = 1 MHz, Pout per tone = -5 dBm ZS = ZL = 50 Ohms The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-100640 Rev. B Preliminary Preliminary SGA-4263 DC-3500 MHz Cascadable MMIC Amplifier Typical RF Performance at Key Operating Frequencies Sy mbol Parameter Unit 100 Frequency Frequency (MHz) Frequency (MHz)(MHz) 500 850 1950 2400 3500 G OIP3 P1dB IRL ORL S12 NF Small Signal Gain Output Third Order Intercept Point Output Pow er at 1dB Compression Input Return Loss Output Return Loss Reverse Isolation Noise Figure VS = 8 V VS = 8 V RBIAS = 110 Ohms RBIAS = 39 Ohms dB dBm dBm dB dB dB dB 14.1 13.9 29.5 14.1 13.7 29.3 14.2 29.4 21.7 18.5 3.4 12.7 25.7 12.5 31.3 13.8 19.0 3.7 12.4 23.6 11.3 33.1 12.2 19.0 4.3 11.3 27.5 23.4 17.7 31.8 22.0 18.3 3.6 18.3 11.7 18.2 Test Conditions: = 45 mA Typ. IID = 80 mA Typ. D T = 25C TLL = 25C OIP Tone Spacing = 1 MHz, Pout per tone = -10 dBm OIP33 Tone Spacing = 1 MHz, Pout per tone = 0 dBm ZS = Z = 50 Ohms ZS = ZLL= 50 Ohms Noise Figure vs. Frequency 5 Noise Figure (dB) 4 3 2 1 VD= 3.2 V, ID= 45 mA (Typ.) Absolute Maximum Ratings Parameter Max. Device Current (ID) Absolute Limit 90 mA 5V +8 dBm +150C -40C to +85C +150C TL=+25C Max. Device Voltage (VD) Max. RF Input Pow er Max. Junction Temp. (TJ) Operating Temp. Range (TL) Max. Storage Temp. TL=+25C 0 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 Operation of this device beyond any one of these limits may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth VD=3.2 V, ID= 45 mA (Typ.) 35 OIP3 vs. Frequency 18 15 P1dB (dBm) 12 9 VD= 3.2 V, ID= 45 mA (Typ.) P1dB vs. Frequency 30 OIP3 (dBm) TL 25 20 TL=+25C TL=+25C 15 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 6 0 0.5 1 1.5 2 Frequency (GHz) 2.5 3 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-100640 Rev. B Preliminary Preliminary SGA-4263 DC-3500 MHz Cascadable MMIC Amplifier |S | vs. Frequency 21 |S | vs. Frequency 11 20 15 10 5 VD= 3.2 V, ID= 45 mA (Typ.) 0 -10 S11(dB) -20 -30 VD= 3.2 V, ID= 45 mA (Typ.) S21(dB) TL 0 0 1 2 3 4 Frequency (GHz) +25C -40C +85C TL -40 5 6 +25C -40C +85C 0 1 2 3 4 Frequency (GHz) 5 6 |S | vs. Frequency 12 |S | vs. Frequency 22 -10 -15 S12(dB) VD= 3.2 V, ID= 45 mA (Typ.) 0 -10 S22(dB) -20 -30 VD= 3.2 V, ID= 45 mA (Typ.) -20 -25 TL -30 0 1 2 3 4 Frequency (GHz) 5 +25C -40C +85C TL -40 +25C -40C +85C 6 0 1 2 3 4 Frequency (GHz) 5 6 NOTE: Full S-parameter data available at www.stanfordmicro.com 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-100640 Rev. B Preliminary Preliminary SGA-4263 DC-3500 MHz Cascadable MMIC Amplifier Basic Application Circuit R BIAS 1 uF 1000 pF Application Circuit Element Values Reference Designator Frequency (Mhz) 500 850 1950 2400 3500 VS CD LC CB CD LC 220 pF 100 pF 68 nH 100 pF 68 pF 33 nH 68 pF 22 pF 22 nH 56 pF 22 pF 18 nH 39 pF 15 pF 15 nH RF in CB 3 1,2 SGA-4263 6 CB RF out Recommended Bias Resistor Values for ID=45mA Supply Voltage(VS) RBIAS 6V 62 8V 110 10 V 150 12 V 200 4,5 VS RBIAS Note: RBIAS provides DC bias stability over temperature. 1 uF 1000 pF LC A42 CD Mounting Instructions 1. Use a large ground pad area near device pins 1, 2, 4, and 5 with many plated through-holes as shown. 3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick FR-4 board with 1 ounce copper on both sides. CB CB Part Identification Marking The part will be marked with an A42 designator on the top surface of the package. Pin # 3 Function RF IN Description RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Connection to ground. Use via holes for best performance to reduce lead inductance as close to ground leads as possible. 654 1 GND A42 123 For package dimensions, refer to outline drawing at www.stanfordmicro.com 6 RF OUT/ RF output and bias pin. DC voltage is BIAS present on this pin, therefore a DC blocking capacitor is necessary for proper operation. GND Sames as Pin 2 2,4,5 Caution: ESD sensitive Part Number Ordering Information Part N umber SGA-4263 R eel Siz e 7" D ev ices/R eel 3000 Appropriate precautions in handling, packaging and testing devices must be observed. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-100640 Rev. B |
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